Apparatus and method for in-situ calibration  of a photoacoustic sensor

ABSTRACT

An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a light emitter to emit light along a transmission path to a gas and an acoustic sensor element configured to detect an acoustic signal emitted from the gas based on the received light. Furthermore, the apparatus includes a sensing unit configured to detect the light transmitted along the transmission path and to provide an output signal, and a calibration unit to receive the output signal from the sensing unit and to provide a calibration information based on the output signal received from the sensing unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/258,646, filed Sep. 7, 2016, which, claims the benefit of GermanPatent Application No. 10 2015 217 098.5 filed Sep. 7, 2015, which areincorporated by reference as if fully set forth.

FIELD

The present disclosure relates to an apparatus and a method for in-situcalibration of a photoacoustic sensor based on calibration informationacquired during operation of the photoacoustic sensor.

BACKGROUND

Gas sensors suffer from multiple calibration procedures and a fastreplacement of the gas sensors after having a comparably short lifecycle. Typical calibration procedures adjust a zero line of the sensorbased on a lowest measured value within a predetermined period, such asfor example a couple of days. However, it is only applicable for sensorshaving periods of time, where a gas compound that shall be measured isabsent and is therefore limited in its usage. Furthermore, itscalibration method is not very precise.

A different calibration procedure may use a reference sensor being inuse only for measuring a calibration value and therefore suffering fromless degradation than the main sensor which shall be calibrated.However, this is expensive, elaborate, and the whole (photoacoustic)sensor becomes larger since the reference sensor needs to be included.

Therefore, there is a need for an improved approach.

SUMMARY

The in-situ calibration of a photoacoustic sensor may be conducted byadjusting an IR emitter based on the calibration information or byperforming a corrected processing of the output signal of the IR emitter(or a signal derived from the output signal). Further embodiments show amicroelectromechanical system comprising the apparatus. Furtherembodiments relate to a (in use) calibration of a photoacoustic sensor(PAS) module.

Embodiments are based on the finding that an in-situ or in usecalibration of a photoacoustic sensor may be performed to overcome theaforementioned limitations. Therefore, gas sensors may have a high andsteady precision over their whole life cycle. Upcoming, multipleembodiments for in-situ calibration, e.g. related to calibrate thephotoacoustic sensor with adjusting an infrared (IR) emitter, are shown.

To be more specific, embodiments are based on the finding that anin-situ or in use calibration of a photoacoustic sensor may be performedbased on calibration information which may be derived from a physicalparameter or characteristic of the photoacoustic sensor or, for example,of the IR emitter of the photoacoustic sensor, and which are achieved ordetected during operation of the photoacoustic sensor. The in-situcalibration of a photoacoustic sensor may be conducted by adjusting anIR emitter based on the calibration information, e.g. by adjusting acontrol signal fed to the IR emitter and/or by correcting the outputsignal of the IR emitter (or a signal derived from the output signal).

Moreover, the in-situ calibration of a photoacoustic sensor may beconducted during processing or evaluating the output signal of the IRemitter (or a signal derived from the output signal), wherein thedetected calibration information is incorporated into the processing orevaluating of the output signal of the IR emitter (or a signal derivedfrom the output signal). As a result, a corrected (e.g. calibrated)processing or evaluating of the output signal of the IR emitter (or asignal derived from the output signal) can be achieved.

Embodiments relate to an apparatus for in-situ calibration of aphotoacoustic sensor e.g. achieved with adjusting an IR emitter. Theapparatus comprises a measurement device and a calibration unit. Themeasurement device is configured to detect or to measure a currentelectric signal (instantaneous signal) at or through the IR emitter ofthe photoacoustic sensor, wherein the calibration unit may compare thecurrent electric signal at the IR emitter with a comparison value forthe electric signal to achieve a comparison result forming a calibrationinformation. When performing the in-situ calibration, the calibrationinformation is applicable to the photoacoustic sensor for adjusting theIR emitter and/or is applicable to an output signal of the photoacousticsensor for correcting the output signal. According to embodiments, thecalibration unit may adjust the current electric signal based on thecomparison result (or the calibration information) to obtain a targetelectric signal at the IR emitter from the in-situ calibration.

According to further embodiments, the apparatus may comprise an optionalprocessing unit to process the output signal of the photoacoustic sensorbased on the calibration information to obtain an adjusted output signalof the photoacoustic sensor. The output signal of the photoacousticsensor may be a response of an acoustic sensor element such as amicrophone of the photoacoustic sensor to the IR radiation of the IRemitter or a gas concentration of a gas component of the measurement gasor a composition of the measurement gas. More specifically, the acousticsensor element responds to the photoacoustic signal of the measurementgas which is stimulated by the IR radiation or the light emitted by theIR/light emitter. However, the calibration information may be providedto the IR emitter or to the processing unit or to both, the IR emitterand the processing unit. In other words, a direct adjustment of the IRemitter may perform an adjustment of the IR radiation of the IR emitter,wherein an indirect adjustment may calculate a calibration value basedon e.g. a deviation of the (current) IR radiation (measure) to acalibrated IR radiation (measure), e.g. using a lookup table, to adjustthe output signal of the photoacoustic sensor.

In other words, the apparatus may detect or measure a current voltage(or instantaneous voltage) at the IR emitter or a current electricalcurrent (or instantaneous electrical current) through the IR emitter,for example to calculate a current electric power (or instantaneouselectrical power) at the IR emitter, and to adjust the current electricpower to a predetermined value or desired value of the electric power.The predetermined or desired value may be obtained from a lookup tableor further matching means, mapping the (current) electric power to atemperature or an emissivity of the IR emitter, wherein the emissivityof the IR emitter may refer to an electromagnetic radiation, such as forexample an IR or temperature radiation. In other words, the calibrationunit may adjust the current electric power such that a target value of aphysical characteristic or physical characteristic of the IR emitter isobtained.

Moreover, embodiments show that the calibration unit is configured toadjust the current electric signal such that a change of resistance ofthe IR emitter is compensated. A change of resistance of the IR emittermay effect a current voltage at the IR emitter or a current electricalcurrent through the IR emitter and therefore effects a power input tothe IR emitter. However, the power input of the IR emitter is directlyrelated to a temperature or an emissivity of the IR emitter, resultingin a shifted wavelength of an electromagnetic radiation of the IRemitter. The resistance of the IR emitter may change for example due toa degradation of the IR emitter.

According to further embodiments, the current electric signal comprisesan electric pulse, e.g. pulse signal or pulsed signal. Moreover, thecalibration unit is configured to calculate a time constant at thefurther acoustic sensor from the current (or instantaneous) physicalcharacteristic based on the electric pulse, wherein the time constantindicates an ability of the current physical characteristic to followthe electric pulse. In other words, an AC current behavior or, morespecifically, a transient behavior of the IR emitter and the currentelectric signal may be calculated. This behavior may be for examplecharacterized using a time constant, which may be calculated byanalyzing an impulse response or a step (function) response of the IRemitter to the electric pulse. Therefore, the electric pulse may be asine or cosine pulse or signal, a rectangular function or a (proximityof a) Dirac impulse.

Moreover, the calibration unit may be configured to adjust the electricpulse such that at least one of an edge steepness, an amplitude, or arepetition frequency of the electric pulse is changed. The change of theelectric pulse (or a sequence of electric pulses or a pulse(d) signal)may also change the physical characteristic of the IR emitters such thatthe absolute difference between the current physical characteristic andthe target value of the physical characteristic is reduced. In otherwords, the aforementioned sine or cosine wave or pulse, the rectangularsignal or the Dirac pulse may be modified such that an electric power atthe IR emitter, a temperature of the IR emitter or an emissivity of theIR emitter is adjusted to their target values. Additionally oralternatively, the electric pulse may be only a measurement signal toobtain a calibration value. Therefore, a property characterizing theamount of calibration that has to be performed on the IR emitter, suchthat for example the time constant, which may be derived from theelectric pulse and a measurement signal used for operating thephotoacoustic sensor is adjusted based on the property. In general, thecurrent physical characteristic may be different from the target valueof the physical characteristic due to a degradation of the IR emitterand wherein the calibration unit may be configured to adjust theelectric pulse or in general, the current electric signal, such that adegradation of the IR emitter is compensated.

Further embodiments relate to an apparatus for in-situ calibration of aphotoacoustic sensor e.g. achieved with adjusting an IR emitter. Theapparatus comprises a calibration unit and a sensing unit. Thecalibration unit is configured to control a signal generator such thatthe signal generator feeds an IR emitter of the photoacoustic sensorwith an electric pulse or pulse(d) signal. The sensing unit isconfigured to detect or measure a current physical characteristic of asurface of the IR emitter, wherein the current physical characteristicof the IR emitter depends on the electric pulse. Moreover, thecalibration unit may compare the current physical characteristic of thesurface of the IR emitter with the target value of the physicalcharacteristic of the surface of the IR emitter to obtain a calibrationsignal forming a calibration information. When performing the in-situcalibration, the calibration information (or the calibration signal) isapplicable to the signal generator for adjusting the IR emitter and/oris applicable to an output signal of the photoacoustic sensor forcorrecting the output signal.

Therefore, the calibration unit may adjust the electric pulse of thesignal generator based on the calibration signal to perform the in-situcalibration. In other words, a temperature or an emissivity, such as forexample the ability to emit electromagnetic radiation, may bedetermined. Therefore, a temperature sensor may measure a temperature ofan environment of the IR emitter, which is for example a temperature ofa gas surrounding the IR emitter. This may refer to an indirectmeasurement of the temperature of the IR emitter.

According to further embodiments, the apparatus comprises a processingunit configured to process an output signal of the photoacoustic sensorbased on the calibration information (or calibration signal) to obtainan adjusted output signal of the photoacoustic sensor. The output signalof the photoacoustic sensor may be a response of an acoustic sensorelement of the photoacoustic sensor to the IR radiation of the IRemitter or a gas concentration of a gas component of the measurement gasor a composition of the measurement gas. However, the calibrationinformation may be provided to the IR emitter or to the processing unitor to both, the IR emitter and the processing unit. In other words, adirect adjustment of the IR emitter may perform an adjustment of the IRradiation of the IR emitter, wherein an indirect adjustment maycalculate a calibration value based on e.g. a deviation of the (current)IR radiation (measure) to a calibrated IR radiation (measure), e.g.using a lookup table, to adjust the output signal of the photoacousticsensor.

Additionally or alternatively, a contactless measurement of temperatureradiation, heat radiation, or IR radiation may be performed using forexample an infrared detector. More specifically, the sensing unit may beconfigured to measure a temperature of the surface of the IR emitterusing determining a temperature of an environment of the IR emitter or asensing unit may measure an infrared radiation of the IR emitter at thesurface of the IR emitter.

Embodiments further show that the calibration unit may be configured tocalculate a time constant of the photoacoustic sensor from the currentphysical characteristic based on the current electric pulse, wherein thetime constant indicates an ability of the current physicalcharacteristic to follow the electric pulse. Furthermore, thecalibration unit may adjust the electric pulse such that at least one ofan edge steepness, an amplitude, or a repetition frequency of theelectric pulse is changed, wherein the change of the electric pulsechanges the physical characteristic of the IR emitter such that theabsolute difference between the current physical characteristic and thetarget value of the physical characteristic is reduced. In general, thecurrent physical characteristic may be different from the target valueof the physical characteristic due to a degradation of the IR emitterand wherein the calibration unit may be configured to adjust theelectric pulse such that the calibration of the IR emitter iscompensated. According to further embodiments, the electric pulse may beused for determining only an amount of degradation of the IR emitter,wherein a value indicating the amount of degradation is used to adjust ameasurement signal of the IR emitter to operate the photoacoustic sensorduring normal operation.

According to further embodiments, the apparatus may comprise the signalgenerator, wherein the signal generator may be configured to generatethe electric pulse and to feed the IR emitter of the photoacousticsensor with the electric pulse. It is advantageous, since the signalgenerator may be easily implemented in the apparatus and furthermore, aphase of the combination of the apparatus and the photoacoustic sensoris reduced, since no external signal generator needs to be used.Additionally or alternatively, a signal generator may be furtherimplemented in the photoacoustic sensor.

According to a further embodiment, the apparatus and the IR emitter ofthe photoacoustic sensor may be formed on a common semiconductorsubstrate. Furthermore, the sensing unit may comprise a semiconductortemperature sensing unit formed within the semiconductor substrate. Oneof an easiest way to implement the temperature sensing unit of thesemiconductor may be to use a pn junction, or in general, differentlydoped areas of the semiconductor substrate to form an area within thesemiconductor substrate being sensitive to temperature changes. Thesemiconductor temperature sensing unit may therefore measure atemperature of the environment of the IR emitter, which is approximatelya temperature of a surface of the IR emitter and therefore indicates anability of the IR emitter to heat the environment when compared to aninput power of the IR emitter. Additionally or alternatively, a sensingunit may be an infrared sensor being integrated into the semiconductorsubstrate. This may be, for example, an infrared diode or a bolometer.

Further embodiments relate to an apparatus for in-situ calibration of aphotoacoustic sensor. The apparatus comprises a calibration unitconfigured to calculate a calibration information. An IR emitter of thephotoacoustic sensor may emit an electromagnetic spectrum (e.g. anelectromagnetic signal or electromagnetic radiation having anelectromagnetic spectrum), wherein the photoacoustic sensor isconfigured to provide at least two measurement signals based on at leasttwo electromagnetic spectra. Moreover, the calibration unit isconfigured to compare the at least two measurement signals to obtain thecalibration information and to apply the calibration information to thephotoacoustic sensor to perform the in-situ calibration. In other words,the photoacoustic sensor may perform two different measurements usingtwo different electromagnetic spectra emitted by the IR emitter,advantageously using the same or at least a similar gas for bothmeasurements, and from comparing the resulting measurement signals toderive information about a current performance of the IR emitter whencompared to an originally calibrated performance.

Based on the information of how the current performance of thephotoacoustic sensor changed with respect to a calibrated performance ofthe photoacoustic sensor, for example an input power to the IR emittermay be adjusted to recalibrate the photoacoustic sensor or, an analysisof the measurement signals may be adjusted such that for the same gasconcentration a current measurement signal and a measurement signalafter calibration of the temperature sensor relate to the same result.This may be achieved by, for example, applying an offset to a lookuptable, where a current measurement signal and a corresponding gasconcentration are stored.

Additionally or alternatively, both approaches may be applied as, forexample, the lookup table comprises a comparably rough resolution andthe input power to the IR emitter may be slightly adjusted such that avalue within the resolution of the lookup table is met. In other words,the major calibration of the photoacoustic sensor may be done usingadjusting adapting, modifying, or regulating a relation between themeasurement signal and a related temperature or IR emissivity of thephotoacoustic sensor. However, the relation between measurement signaland temperature or IR emissivity may be quantized such as e.g. thelookup table. Therefore, the calibration unit may apply an input signalor power on the IR emitter to slightly adjust the temperature or an IRemissivity of the IR emitter such that the quantization steps are met.

In other words, the calibration unit may be configured to control anelectric signal at the IR emitter, wherein the IR emitter is configuredto emit an electromagnetic spectrum based on the electric signal, andwherein the calibration unit is further configured to adjust theelectric signal at the IR emitter based on the calibration informationto perform the in-situ calibration. Furthermore, the calibration unitmay be configured to calibrate a determination, identification, orspecification of a gas concentration in the photoacoustic sensor usingthe calibration information to perform the in-situ calibration, whereinthe determination, identification, or specification of the gasconcentration is based on a further measurement signal of thephotoacoustic sensor.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will be discussed subsequentlyreferring to the enclosed drawings, wherein:

FIG. 1 shows a schematic block diagram of an apparatus for in-situcalibration of a photoacoustic sensor according to a first aspect of oneor more embodiments;

FIG. 2 shows a schematic block diagram of an apparatus for in-situcalibration of a photoacoustic sensor according to a second aspect ofone or more embodiments;

FIG. 3 shows a schematic functional block diagram of both the first andsecond aspects according to one or more embodiments;

FIG. 4 shows a schematic block diagram of an apparatus for in-situcalibration of a photoacoustic sensor according to a third aspect of oneor more embodiments;

FIG. 5 shows a schematic block diagram of a micromechanical systemoptionally comprising the apparatus according to one or moreembodiments;

FIG. 6 shows a schematic block diagram of a method which may beperformed by the first aspect according to one or more embodiments;

FIG. 7 shows a schematic block diagram of a method which may beperformed using the second aspect according to one or more embodiments;

FIG. 8 shows a schematic block diagram of a method which may control orcalibrate an IR emitter based on a (transient) behavior of the detectorsignal according to the third aspect according to one or moreembodiments;

FIG. 9 shows a schematic block diagram of a method for performing anin-situ calibration of a photoacoustic sensor with adjusting an IRemitter according to one or more embodiments;

FIG. 10 shows a schematic block diagram of a method for in-situcalibration of a photoacoustic sensor according to one or moreembodiments;

FIG. 11 shows a method for in-situ calibration of a photoacoustic sensoraccording to one or more embodiments; and

FIG. 12 shows a schematic cross sectional view of an exemplaryphotoacoustic sensor according to one or more embodiments.

DETAILED DESCRIPTION

In the following, embodiments of the invention will be described infurther detail. Elements shown in the respective figures having the sameor a similar functionality will have associated therewith the samereference signs.

FIG. 1 shows a schematic block diagram of an apparatus 2 for in-situcalibration of a photoacoustic sensor 4 e.g. achieved with adjusting anIR emitter 6 according to a first aspect. The apparatus 2 comprises ameasurement device 8 and a calibration unit 10. The measurement deviceis configured to detect a current electric signal (or instantaneouselectrical signal) 7 at the IR emitter of the photoacoustic sensor andto provide the calibration unit 10 with an information signal 9 based onthe detected current electric signal 7. A current electric signal is,for example, a voltage at or over the IR emitter, an electrical currentthrough the IR emitter, or an input power of the IR emitter. Moreover,the IR emitter may be a heating wire, a LED or a laser. The calibrationunit 10 is configured to compare the detected current electric signal atthe IR emitter with a comparison value for the electric signal toachieve a comparison result 11 forming a calibration information. Whenperforming the in-situ calibration, the calibration information (or thecomparison result) 11 is applicable to the photoacoustic sensor foradjusting the IR emitter and/or is applicable to an output signal 17 ofthe photoacoustic sensor for correcting the output signal 17.

According to embodiments, the calibration unit 10 may then adjust thecurrent electric signal based on the comparison result 11 (calibrationinformation) to obtain a target value of the electric signal at the IRemitter to perform the in-situ calibration. Again, the electric signalmay be an electric current, a voltage at the IR emitter, or acombination thereof, for example an electric (input) power or aresistance of the IR emitter, or may be derived therefrom.

According to further embodiments, the photoacoustic sensor mayoptionally comprise a processing unit 15. The processing unit 15 mayprocess the output signal of the photoacoustic sensor based on thecalibration information to obtain an adjusted output signal of thephotoacoustic sensor 4. The output signal of the photoacoustic sensormay be a response of an acoustic sensor element such as a microphone ofthe photoacoustic sensor to the photoacoustic signal caused by the IRradiation of the IR emitter to a gas concentration of a gas component ofthe measurement gas or a composition of the measurement gas. However,the calibration information may be provided to the IR emitter or to theprocessing unit or to both, the IR emitter and the processing unit. Inother words, a direct adjustment of the IR emitter may perform anadjustment of the IR radiation of the IR emitter, wherein an indirectadjustment may calculate a calibration value based on e.g. a deviationof the (current) IR radiation (measure) to a calibrated IR radiation(measure), e.g. using a lookup table, to adjust the output signal of thephotoacoustic sensor. Moreover, the processing unit 15 and thecalibration unit 10 may be implemented in the same or a common (micro-)processor. In other words, the calibration unit 10 and the processingunit 15 may be implemented or incorporated in (the same) hardware and/orsoftware or at least partially in hardware. Furthermore, the calibrationinformation 11 may be input to the IR emitter 6 or the processing unit15, dependent on the embodiment.

In other words, a current electric current, voltage, power, orresistance of the IR emitter may be measured using the measurementdevice 8 and be compared to a target value of the measured electricalproperty. Furthermore, the power source may be adjusted such that thecurrent physical property or electric signal and the (expected) targetvalue converge. In other words, an absolute difference of (a value of)the current physical property and (a value of) the target value of thephysical property may be reduced. A convergence of the current electricsignal and a target value of the electric signal is advantageous or maybe even necessary to emit a target value or a physical characteristicfrom the IR emitter. The physical characteristic may be a temperature oran IR radiation of the IR emitter. In other words, the IR emitter itselfmay be sensor indicating a degradation of the emitter e.g. by a changeof resistance. The resistance of the IR emitter suffering fromdegradation may change differently over the temperature when compared toa calibrated or known temperature range.

Moreover, adjusting the IR emitter or the output signal may refer to acalibration. Therefore, the adjustment may reduce a difference or anerror between a current signal having an electromagnetic spectrum and acalibrated value of the electromagnetic spectrum. Accordingly, adifference or an error between a current output signal and a calibratedvalue of the output signal (as a response to the electromagnetic wavestransmitted or emitted by the IR emitter) is reduced. This may refer toa calibrated IR emitter or a calibrated output signal.

FIG. 2 shows a schematic block diagram of an apparatus 2′ for in-situcalibration of a photoacoustic sensor 4 e.g. achieved with adjusting anIR emitter 6 according to a second aspect. The apparatus 2′ comprisesagain a calibration unit 10 and a sensing unit 8′. However, thecalibration unit is configured to control a signal generator 12 suchthat the signal generator feeds an IR emitter of the photoacousticsensor with an electric pulse 13, e.g. a pulse signal or pulsed signal.The sensing unit 8′ is therefore configured to detect a current physicalcharacteristic 7′ of a surface of the IR emitter, wherein the currentphysical characteristic of the IR emitter depends on the electric pulse.The physical characteristic may be a temperature at the surface of theIR emitter or an emissivity of, for example, an IR radiation, atemperature radiation or a further electromechanical radiation. Thesensing unit 8′ may be configured to detect or measure the physicalcharacteristic and therefore be capable of measuring a temperature,electromechanical waves or IR radiation. This may be a temperaturesensor, a bolometer, or an IR diode, to name only a few examples, and toprovide the calibration unit 10′ with an information signal 9′ based onthe detected physical characteristic 7′.

Moreover, the calibration unit 10′ is configured to compare the(detected) current physical characteristic of the surface of the IRemitter with a target value of the physical characteristic of thesurface of the IR emitter to obtain a calibration signal 11′ forming acalibration information. When performing the in-situ calibration, thecalibration information is applicable to the signal generator (12) foradjusting the IR emitter and/or is applicable to an output signal of thephotoacoustic sensor for correcting the output signal.

According to embodiments, the calibration unit may adjust the electricpulse 13 of the signal generator 12 based on the calibration signal toperform the in-situ calibration. In other words, the calibration unitdetermines the physical characteristic at the surface of the IR emitter,wherein the calibration unit compares this value with a target value ofthe physical characteristic. The target value of the physicalcharacteristic may be a current temperature or IR radiation used forperforming a gas concentration measurement. However, the calibrationunit may adjust the signal generator, for example a total power or amodulation frequency of an electric signal, such that the target valueor the expected value of the physical characteristic is obtained at thesurface of the IR emitter.

According to further embodiments, the apparatus 2′ may optionallycomprise a processing unit 15 configured to process an output signal ofthe photoacoustic sensor based on the calibration information to obtainan adjusted output signal of the photoacoustic sensor. The output signalof the photoacoustic sensor may be a response of an acoustic sensorelement of the photoacoustic sensor to the IR radiation of the IRemitter or a gas concentration of a gas component of the measurement gasor a composition of the measurement gas. However, the calibrationinformation may be provided to the IR emitter or to the processing unitor to both, the IR emitter and the processing unit. In other words, adirect adjustment of the IR emitter may perform an adjustment of the IRradiation of the IR emitter, wherein an indirect adjustment maycalculate a calibration value based on e.g. a deviation of the (current)IR radiation (measure) to a calibrated IR radiation (measure), e.g.using a lookup table, to adjust the output signal of the photoacousticsensor. Moreover, the processing unit 15 and the calibration unit 10 maybe implemented in the same or a common (micro-) processor (or insoftware) or at least partially in hardware.

The measurement device 8 (e.g. shown in FIG. 1) and the sensing unit 8′(e.g. shown in FIG. 2) are mutually applicable blocks within all relatedembodiments. However, the term measurement device may imply measuring,for example a voltage, an electric current, a resistance, or an electric(input) power, wherein sensing unit may refer to sensors such as, forexample temperature sensors or IR sensors detecting or measuring e.g. an(output) power of the IR emitter. Nonetheless, since the electricalproperties and the temperature or radiation properties are directlyrelated to each other through the IR emitter there is a good reason toperform a switching of the aforementioned blocks 8 and 8′. Furthermore,apparatus 2 and apparatus 2′ are mutually applicable as well.

FIG. 3 shows a schematic functional block diagram of both aforementionedaspects according to embodiments. Even though, it is adapted to thefirst aspect described with respect to FIG. 1 at the first sight, it mayeasily be adapted to the second aspect by removing the electricalconnections 14 between the IR emitter 6 and the measurement device 8(since the sensing unit may detect a temperature or an IR radiation ofthe IR emitter). However, when referring to the first aspect, themeasurement device 8 below the IR remitter and connected in parallel tothe IR emitter may be, for example a voltmeter. Additionally oralternatively, the measurement device 8 may be connected in series tothe IR emitter 6 if it is, for example, an ampere-meter or ammeter.Furthermore, the calibration unit 10 receives a measurement result 9from the measurement device 8 and may calculate a current electricalpower at the IR emitter 6 or a current resistance of the IR emitter 6.Moreover, the calibration unit 10 may send a signal 16 to the signalgenerator 12 or power source 12, such that an output of the power source12 is adjusted such that for example a target power input to the IRemitter 6 is achieved. Therefore, the calibration unit 10 may beconfigured to adjust the current electric signal (e.g. the feed orcontrol signal) 18 such that a change of resistance of the IR emitter 6is compensated. The change of resistance of the IR emitter may be due toa change of the mechanical properties of the IR emitter, for example dueto the high temperatures the IR emitter is subjected to. In other words,the high temperatures of the IR emitter may cause an early degradationof the IR emitter. However, other influences may also cause adegradation of the IR emitter 6.

As already mentioned, power source 12 may be either configured toprovide a regular AC or DC power to the IR emitter 6 to perform gasconcentration measurements with the photoacoustic sensor during normaloperation modes. Moreover, the power source 12 may also be configured tofunction as a signal generator being able to provide more sophisticatedvoltages or forms of the electrical current such as, for example, Diracpulses, rectangular pulses, or step functions. According to furtherembodiments, the power source or signal generator 12 may be formed intwo separate blocks for the signal generation and the power supply forthe IR emitter 6.

Furthermore, the current electrical signal 18 may comprise an electricpulse, e.g. a pulse signal or pulsed signal. The electric pulse may beeither part of normal operation of the photoacoustic sensor or it mayonly be applied for calibration purposes during a separate calibrationmeasurement. However, the calibration unit 10 may be configured tocalculate a time constant of the photoacoustic sensor from the currentphysical characteristic based on the electric pulse. The time constantmay indicate an ability of the current physical characteristic to followor track the electric pulse. Moreover, the calibration unit may adjustthe electric pulse such that at least one of an edge steepness, anamplitude, or a repetition frequency of the electric pulse is changedand wherein the change of the electric pulse may change the physicalcharacteristic of the IR emitter such that the absolute differencebetween a current physical characteristic and the target value of thephysical characteristic is reduced. However, a difference between thetarget value of the physical characteristic and a current value of thephysical characteristic may be obtained due to a degradation of the IRemitter.

The time constant or a further characteristical property may be, forexample, obtained by evaluating a step function, a Dirac impulse, or arectangular function. The time constant may therefore be a generalmeasure characterizing the emitter performance not only for thecurrently applied electrical power but for a broad range of operatingpoints such as, for example, all possible operating points of thephotoacoustic sensor.

As already described, FIG. 3 may be already adapted to the second aspectdescribed with respect to FIG. 2. Therefore, the sensing unit 8′,replacing the measurement device 8, may be configured to measure atemperature of the surface of the IR emitter using, for example,determining a temperature of an environment of the IR emitter or bymeasuring an infrared radiation of the IR emitter at the surface of theIR emitter. Measuring a temperature of the environment of the IRemitter, such as for example measuring a temperature of a surroundinggas of the IR emitter may be referred to as an indirect measurement of atemperature of the surface of the IR emitter. Additionally oralternatively, the sensing unit 8′ may be for example a radiationdetector such as for example an IR detector or a bolometer, which may bereferred to as a direct measurement. The radiation sensor may beconfigured to detect or measure, for example, an emissivity of thesurface of the IR emitter, such as an emissivity of an IR radiation.Since the electric pulse is applied to the IR emitter, the sensing unitor sensing element may measure or detect a transient performance of theIR emitter. The transient performance of the IR emitter as a function ofthe input power depends (mainly) on the heat transfer or thermaltransfer at the surface of the IR emitter. However, the transientperformance may be the adaptation of an output power or performance toan input power or performance. A change or an error at the IR emittermay therefore be detected by comparing a current transient performanceto a stored or target performance.

This method or operation is especially advantageous for fastphotoacoustic sensors based on MEMS components. These sensors may besmall and therefore fast, since they comprise a small thermal mass whencompared to bigger or larger sensors. However, if the surface of the IRemitter changes, which is for example a change of the materialproperties, such as for example a corrosion or oxidation of the surface,may result, for example in an offset or a time delay of an IR radiation.Additionally or alternatively, an overall drop of the temperature or anIR radiation of the IR emitter may be also caused.

According to further embodiments, a temperature of the IR emitter may bemeasured using a temperature sensor such as for example a PT element, apn-diode, or a bolometer, etc., which may be integrated in the emitteror placed nearby the emitter. Comparing an input power of the IR emitterto an achieved temperature at the IR emitter reveals informationregarding the emitter performance and may be used to adapt the inputpower to achieve a target value of the temperature. This may result in aconstant IR emission. This embodiment and all other embodiments using anormal or an ordinary measurement signal, which may be also used toperform a gas concentration measurement of the PAS sensor, may beperformed during normal operation of the photoacoustic sensor or duringa separate calibration measurement.

According to further embodiments, a measurement signal of an acousticsensor element of the photoacoustic sensor depends on an excitationfrequency of the IR emitter. A change of the excitation frequency or anerror of the IR emitter may be obtained by comparing the measurementsignal to a stored reference signal. According to further embodiments, atransient behavior as well as an absolute value of a measurement signalof the gas concentration depends on or is based on a pressure of areference cell. Comparing this transient behavior or performance, forexample, with a stored performance, for example stored in an EEPROM or afurther storage medium, may indicate a change of a pressure in thereference cell. This may provide information for a calibration or anerror detection within the pressure measurement module or the referencecell.

According to further embodiments a variation of the temperature of theIR emitter results in a change of an emitted IR spectrum or a shift oroffset of the spectrum. Therefore, by changing the emitter temperature asensitivity of the photoacoustic sensor may be achieved for differentgases, which may result in an adjustable sensitivity of the PAS sensor.A regular (periodic) comparison with a stored behavior revealsinformation about a composition of a current measurement gas, forexample in a long-term measurement, or reveals information of a changeof the sensor characteristics or an error in the PAS sensor, for examplewhen evaluating a short-term profile.

According to further embodiments, a transient behavior and an achievedtemperature of the emitter depends on a composition of the surroundinggases, for example of a (atmospheric) humidity. Periodically comparingthe measured transient behavior to a stored transient behavior revealsinformation of a composition of the gases, for example sealing gases ofthe IR emitter and/or the acoustic sensor element of the photoacousticsensor, if, for example, evaluating a long-term behavior. Moreover, itmay reveal information about a change of the properties orcharacteristics of the photoacoustic sensor if for example evaluating ashort-term behavior. A change of, for example a sealing gas of the IRemitter may influence the heating performance of the IR emitter. It maybe seen that for example a humidity or a composition of gases may changecomparably slow, which may be measured or detected in a long-termmeasurement or long-term behavior, wherein a degradation of the emittermay be comparably fast or even performed by a jump-up or by a sharprise, which may be measured in a short-term behavior or short-termmeasurement of the photoacoustic sensor.

Embodiments relate to an in-use, online, or in-situ calibration ofPAS-sensors comprising error detection or detection ofcross-sensitivities, for example by a change of a sealing gascomposition, which affects the measurement or detection of gasconcentrations of a measurement gas. Therefore, a temperature sensor maymeasure an IR emitter temperature and compare the measured temperatureto a target value or a stored value with respect to (or considering) aninput power to the IR emitter. The temperature sensor may be, forexample, a PT wire which may be used both as the IR emitter (or heater)and the temperature sensor. This may relate to both, a typical AC or DCbehavior or a transient behavior. Moreover, a transient behavior of agas sensor measurement unit (i.e. the acoustic sensor element) of thephotoacoustic sensor may be obtained and, for example, compared with astored behavior. This may be achieved by a variation of the IR radiationby changing the input power to the IR emitter, analyzing the resultingmeasurement signal and comparing characteristic absorption curves ofdifferent gases. This may be achieved using for example the upcomingembodiments of the third aspect.

To be more specific, according to embodiments an in-situ or in usecalibration of the photoacoustic sensor 4 may be performed based on thecalibration information 20 which may be derived from a physicalparameter or characteristic of the photoacoustic sensor or, for example,of the IR emitter 6 of the photoacoustic sensor, and which are achievedor detected during operation of the photoacoustic sensor or the IRemitter, respectively.

The sensing unit may be configured to detect or measure the physicalcharacteristic of the IR emitter and to provide the calibration unitwith measurement signals (or an information signal) based on thedetected physical characteristic. The sensing unit may be part of thephotoacoustic sensor for directly sensing the physical parameter or,alternatively, may be arranged external to the photoacoustic sensor forindirectly sensing the physical parameter.

The in-situ calibration of the photoacoustic sensor may be conducted byadjusting the IR emitter based on the calibration information, e.g. byadjusting a control signal fed to the IR emitter and/or by correctingthe output signal of the IR emitter (or a signal derived from the outputsignal). Moreover, the in-situ calibration of a photoacoustic sensor maybe conducted during processing or evaluating the output signal of the IRemitter (or a signal derived from the output signal), wherein thedetected calibration information is incorporated into the processing orevaluating of the output signal of the IR emitter (or a signal derivedfrom the output signal). As a result, a corrected processing orevaluating of the output signal of the IR emitter (or a signal derivedfrom the output signal) can be conducted. Therefore, a calibratedmeasurement signal may be achieved.

FIG. 4 shows a schematic block diagram of an apparatus 2″ for in-situcalibration of a photoacoustic sensor 4 according to a third aspectaccording to embodiments. The apparatus 2″ comprises a calibration unit10 configured to calculate a calibration information 20. The IR emitter6 of the photoacoustic sensor 4 is furthermore configured to emit anelectromagnetic spectrum (e.g. an electromagnetic signal orelectromagnetic radiation having an electromagnetic spectrum), whereinthe photoacoustic sensor, or more specifically, an acoustic sensorelement of the photoacoustic sensor may be configured to provide atleast two measurement signals 22 based on at least two electromagneticspectra, wherein the calibration unit 10 may be configured to comparethe at least two measurement signals 22 to obtain the calibrationinformation 20. The acoustic sensor element may be different from thesensing element and is configured to receive the electromagnetic wave(s)emitted or send out by the IR emitter. Moreover, the calibration unit 10may be configured to apply the calibration information 20 (directly) tothe photoacoustic sensor (or to an output signal of the photoacousticsensor) to perform the in-situ calibration. According to furtherembodiments, the calibration unit may be configured to control anelectric signal at the IR emitter, such as for example an electric powerof the IR emitter. Moreover, the IR emitter may emit an electromagneticspectrum based on the electric signal and the calibration unit may befurther configured to adjust the electric signal at the IR emitter basedon the calibration information 20 to perform the in-situ calibration.The calibration information 11, 11′ and 20 are mutually applicable.

In the following, some exemplary calibration concepts are described inthe context of the embodiments of FIG. 4.

An acoustic sensor (element) of the photoacoustic sensor may receive anacoustic signal from a measurement gas, which may be excited by an(alternating or modulated) electromagnetic spectrum or signal. Thecalibration unit performs an iteration or analysis of the measurementsignals 22 and compares the measurement signals to each other.Optionally, the calibration unit 10 compares the measurement signals toa stored reference if, for example the current reference gas compositionis known. These may be options to derive the calibration information.However according to a preferred embodiment, the calibration unit mayadjust the input of the IR emitter based on the calibration informationsuch that a target IR radiation or temperature of the IR emitter isobtained if the calibration information reveals that a currentperformance of the IR emitter changed compared to an initial calibrationor a previous calibration.

Additionally or alternatively, to adjust the input power of the IRemitter, it may be further changed a mapping or a transformation of themeasurement signal to a respective gas concentration in the measurementgas, for example by adjusting a lookup table based on the calibrationinformation. In other words, the calibration unit 10 may be configuredto calibrate a determination of gas concentration in the photoacousticsensor using the calibration information to perform the in-situcalibration. The determination of the gas concentration may be based ona further measurement signal of the photoacoustic sensor. The furthermeasurement signal may be derived using settings of the IR emitter thatare different from the settings applied for measuring the (first orprevious) measurement signal. A different setting may refer to differenttemperatures, different IR radiation or in general, electromagneticradiation, e.g. induced by a change of the electrical current, voltage,or input power.

In other words, the calibration unit 10 may be configured to calculate acurrent ratio of a first of the at least two measurement signals and asecond of the at least two measurement signals, wherein the calibrationunit is further configured to compare the current ratio to a targetratio. However, the first and the second of the at least two measurementsignals may be derived using settings of the IR emitter for the first ofthe at least two measurement signals that are different from thesettings applied for measuring the second of the at least twomeasurement signals.

According to further embodiments, the apparatus 2″ may optionallycomprise a processing unit 15, which may be configured to adjust theelectric power such that an absolute difference of the current ratio tothe target ratio is reduced, or the calibration unit may be configuredto calibrate a determination of a gas concentration in the photoacousticsensor such that the absolute difference of the current ratio to thetarget ratio is reduced.

In other words, a drift of the spectrum, e.g. due to a change of theemissivity of the emitter, may be applied or forced and furthercalibrated through a change of the temperature of the emitter.Therefore, having a current operating point that is slowly or even notchanging or drifting, e.g. the operating point being sensitive to anabsorption spectrum of a slowly or even not changing gas (composition),a comparison of one or more operating points may indicate a degradationor even an amount of degradation of the IR emitter. An operating pointis e.g. measurement using a current temperature or IR radiation of theIR emitter.

Moreover, the processing unit may be configured to process an outputsignal 17 of the photoacoustic sensor based on the calibrationinformation to obtain an adjusted output signal of the photoacousticsensor. The output signal of the photoacoustic sensor may be a responseof an acoustic sensor element of the photoacoustic sensor to the IRradiation of the IR emitter or a gas concentration of a gas component ofthe measurement gas or a composition of the measurement gas. However,the calibration information may be provided to the IR emitter or to theprocessing unit or to both, the IR emitter and the processing unit. Inother words, a direct adjustment of the IR emitter may perform anadjustment of the IR radiation of the IR emitter, wherein an indirectadjustment may calculate a calibration value based on e.g. a deviationof the (current) IR radiation (measure) to a calibrated IR radiation(measure), e.g. using a lookup table, to adjust the output signal of thephotoacoustic sensor. Moreover, the processing unit 15 and thecalibration unit 10 may be implemented in the same or a common (micro-)processor.

The in-situ calibration of the photoacoustic sensor may be conducted byadjusting the IR emitter based on the calibration information, e.g. byadjusting a control signal fed to the IR emitter and/or by correctingthe output signal of the IR emitter (or a signal derived from the outputsignal). Moreover, the in-situ calibration of a photoacoustic sensor maybe conducted during processing or evaluating the output signal of the IRemitter (or a signal derived from the output signal), wherein thedetected calibration information is incorporated into the processing orevaluating of the output signal of the IR emitter (or a signal derivedfrom the output signal). As a result, a corrected processing orevaluating of the output signal of the IR emitter (or a signal derivedfrom the output signal) can be conducted.

More specifically, a first of the at least two measurement signals maybe derived using a spectrum, which is sensitive to the currentmeasurement gas. As a reference, a second measurement signal of the atleast two measurement signals may be obtained using a spectrum, which isnot sensitive to the current measurement gas. A difference of the secondmeasurement signal (reference measure) to a reference measure obtainedduring calibration of the photoacoustic sensor may result in thecalibration information, which may be applied to the first measurementsignal. For example, the first measurement signal may be increased ordecreased by the difference obtained from the reference measure. Inother words, the calibration information is the difference obtained fromthe reference measure or a measure of the difference obtained from thereference measure.

Furthermore, an intensity of the IR radiation of the IR emitter may bederived from an alternating sequence of the at least two measurementsignals, obtained from an alternating sequence of two electromagneticspectra (e.g. IR spectra). The two electromagnetic spectra may bechopped or iteratively alternated using a (chopping) frequency which maybe (e.g. at least 10 times) higher than a (average) change of thecomposition of the measurement gas. In other words, from two differentsensitivities of the acoustic sensor element of the photoacousticsensor, related to two different electromagnetic spectra, the (current)intensity of the IR emitter may be derived.

FIG. 5 shows a schematic block diagram of a micromechanical system 100according to embodiments, optionally comprising the photoacoustic sensor4. The micromechanical system 100 may comprise multiple (wafers of a)semiconductor substrate(s) 102, such as for example six semiconductorsubstrates 102 a-102 f as depicted in FIG. 5. Semiconductor substrates102 a-102 c may form a wafer stack of an acoustic sensor element of thephotoacoustic sensor and furthermore, semiconductor substrates 102 d-102f may form an emitter of the photoacoustic sensor, wherein the IRemitter 6 is part of the emitter. Together with the cavities 104 a and104 b, the IR emitter 6 may form a black body radiator. A further cavity106 may house a measurement gas whose components will be analyzed by thephotoacoustic sensor. Therefore, the IR emitter 6 may transmit IRradiation through the housing 108 a,b of the measuring chamber 106,which is permeable or invisible for IR radiation. The measuring gaswithin measuring chamber 106 may absorb specific wavelengths of the IRradiation due to the photoacoustic effect. The reduced IR radiationspectrum further strikes on a reference gas or stimulates the referencegas within reference chamber 110 and is again stimulated due to thephotoacoustic effect. A membrane, sensor, or microphone 112 may measurethe stimulation or excitation of the reference gas and provide ameasurement signal 22.

Since the whole photoacoustic sensor 4 may be implemented in one or moresemiconductor substrates, it may be advantageous to also include theapparatus 2, 2′, or 2″ (which are mutually applicable) in one of thesemiconductor substrates used to form the photoacoustic sensor. This mayreduce a construction size of the overall microelectromechanical system100. It is further advantageous to integrate the apparatus into thephotoacoustic sensor, since the measurement device or the sensing unit8, 8′ may be easily formed within the semiconductor substrate, forexample using a pn junction, a thermopile or a (temperature depending)resistor. In other words, the micromechanical system 100 may comprise anapparatus and the IR emitter, wherein the apparatus and the IR emitterof the photoacoustic sensor are formed in a common semiconductorsubstrate, and wherein the sensing unit or sensing element 8′ ormeasurement device 8 comprises a semiconductor sensing unit formedwithin the semiconductor substrate. A semiconductor sensing unit may bea semiconductor temperature sensing unit or a semiconductor IR sensingunit. In other words, the semiconductor sensing unit may be formed orintegrated in the semiconductor substrate. However, the descriptionregarding the sensing units also applies mutatis mutantis oranalogously.

Moreover, the described photoacoustic sensor 4 comprising a wafer stackof multiple wafers 102 may use or provide a chopper or modulationfrequency within 1 to 100 Hz and a comparably small heat or thermalcapacity. The modulation of the IR emitter may be performed using achange of an amplitude of the input signal or a change of the frequencyof the input signal of the IR emitter. Therefore, the IR emitter may beoperated using pulse-width modulation, amplitude modulation, orpulse-density modulation.

Moreover, an integrated apparatus 2, 2′, 2″, wherein the apparatus andthe photoacoustic sensor are integrated in one or more commonsemiconductor substrates to form a microelectromechanical system. Such amicroelectromechanical system are small systems having and enabling highduty cycles due to a low heat or thermal capacity. Moreover, multigassensors may be formed e.g. by forming an array of thesemicroelectromechanical systems having different (IR) excitationfrequencies, or using different (IR) excitation frequencies in onemicroelectromechanical system, e.g. one after the other. Again, thesmall heat capacity resulting in a fast cool down of the IR emitterenables the system driving different excitation frequencies in a rapidsuccession.

In the following, multiple methods will be described which may beperformed by one or more of the previously described aspects.

FIG. 6 shows a schematic block diagram of a method 600 which may beperformed by aspect 1. In a step 605, an IR emitter target or multipleIR emitter targets comprising a power (I, U) and a temperature arederived, calculated or set. In other words, it may be fed a lookup tablewith pairs of a (input) power (or an electrical current and anelectrical voltage) and a corresponding temperature. During calibrationmode or during normal operation, an IR emitter resistance is measured ina step 610. In a step 615, a calibrated IR emitter resistance is derivedfrom a calibrated temperature dependency, e.g. the lookup table of step605, using a current input power of the IR. In a step 620, the IRemitter resistance of the measurement and the calibrated value iscompared. Based on the comparing, in a step 625, an adapted power iscalculated to keep the temperature on target. The adapted power input ofstep 625 is further input to IR emitter 6 in a step 630.

FIG. 7 shows a schematic block diagram of a method 700, which may beadvantageously performed using aspect 2 of the aforementioned aspects.In a step 705, the IR emitter target is defined using a transientbehavior of the (output) power or the resistor (IR emitter) as afunction of the form of the input signal. The transient behavior of theresistor may be seen as a transient behavior of the resistance of the IRemitter, or according to preferred embodiments, as an ability of the IRemitter to transform the input power to an output power (efficiency ofthe IR emitter), derived using measuring the temperature of theenvironment of the IR emitter or an IR radiation of the IR emitter. Thetransient behavior of the resistance may indicate a change or analteration or a degradation of a surface of the IR emitter, since loadcarriers such as electrons become distributed near the surface of the IRemitter due to the skin effect. The skin effect is the tendency of analternating electric current (AC) to become distributed within aconductor such that the current density is largest near the surface ofthe conductor, and decreases with greater depths in the conductor. Theelectric current flows mainly at the “skin” of the conductor, betweenthe outer surface and a level called the skin depth. The skin effectcauses the effective resistance of the conductor to increase at higherfrequencies where the skin depth is smaller, thus reducing the effectivecross-section of the conductor. The skin effect is due to opposing eddycurrents induced by the changing magnetic field resulting from thealternating current.

During operation of the IR emitter 6, in a step 710 a transient behaviorof the power/resistor is measured. Accordingly, a transient behavior ofthe power/resistor is derived from the calibrated temperature dependencybased on the current power input of the IR emitter in a step 715. In astep 720, the transient behavior of the power/resistor of themeasurement and the calibrated value is compared. Furthermore, in a step725, an adapted (input) power of the IR emitter or an adapted form ofthe input signal to the IR emitter 6 is calculated to keep thetemperature/form on target, wherein in a step 730 the calculated poweror form of the input signal is applied to the IR emitter 6. The method700 may perform a control or calibration of the IR emitter based on atransient behavior.

FIG. 8 shows a schematic block diagram of a method 800 which may controlor calibrate the IR emitter based on a (transient) behavior of thedetector signal. Method 800 comprises a step 805, wherein IR emittertarget is defined as a transient behavior of the detector as a functionof the form of the input signal. Again, as already seen with respect tomethods 600 and 700, in a step 820, a transient behavior of the detectoris compared using the measurement signal derived in a step 810 and acalibrated value derived in a step 815, wherein the transient behaviorof the detector depends, for example on the calibrated temperature orform, or on a concentration dependency of the measurement signal to theconcentration of the (measurement or reference) gas. Moreover, in a step825 an adapted power or form of the input signal of the IR emitter iscalculated to keep the temperature or form of the input signal on targetand in a step 830 the calculated input signal is adapted to the IRemitter 6. The method 800 may be advantageously performed by aspect 3.

FIG. 9 shows a schematic block diagram of a method 900 for performing anin-situ calibration of a photoacoustic sensor 2 with adjusting an IRemitter. The method 900 comprises measuring a current electric signal atthe IR emitter of the photoacoustic sensor in a step 905 and comparingthe current electric signal at the IR emitter with a comparison valuefor the electric signal to achieve a comparison result forming acalibration information and wherein, when performing the in-situcalibration, the calibration information is applicable to thephotoacoustic sensor for adjusting the IR emitter and/or is applicableto an output signal of the photoacoustic sensor for correcting theoutput signal in a step 910.

FIG. 10 shows a schematic block diagram of a method 1000 for in-situcalibration of a photoacoustic sensor achieved with adjusting an IRemitter. The method 1000 comprises a step 1005 of controlling a signalgenerator such that the signal generator feeds an IR emitter of thephotoacoustic sensor with an electric pulse or pulse(d) signal, a step1010 of detecting a current physical characteristic of a surface of theIR emitter, wherein the current physical characteristic of the IRemitter depends on the electric pulse, and a step 1015 of comparing thecurrent physical characteristic of the surface of the IR emitter with atarget value of the physical characteristic of the surface of the IRemitter to obtain a calibration signal forming a calibration informationwherein, when performing the in-situ calibration, the calibrationinformation is applicable to the signal generator for adjusting the IRemitter and/or is applicable to an output signal of the photoacousticsensor for correcting the output signal.

FIG. 11 shows a method 1100 for in-situ calibration of a photoacousticsensor. The method 1100 comprises a step 1105 of calculating acalibration information, wherein an IR emitter of the photoacousticsensor is configured to emit an electromagnetic spectrum based on theelectric signal, wherein the photoacoustic sensor is configured toprovide at least two measurement signals based on at least twoelectromagnetic spectra, and a step 1110 of comparing the at least twomeasurement signals to obtain a calibration information, and to applythe calibration information to the photoacoustic sensor to perform thein-situ calibration.

FIG. 12 shows a schematic cross sectional view of an exemplaryphotoacoustic sensor according to embodiments. The photoacoustic sensormay be part of or connected to the apparatus 2′, 2″ for in-situcalibration of a photoacoustic sensor 4. Thus, apparatus-specificfeatures such as e.g. the signal generator 12 or the calibration signal11′ are not explicitly shown in FIG. 12. However, these features may beapplied accordingly to the embodiments described with respect to FIG.12. The features are described e.g. in FIG. 2.

The apparatus 2′ for in-situ calibration of a photoacoustic sensor 4comprises a light emitter 6, an acoustic sensor element 112, a sensingunit 8 a and a calibration unit 10. The light emitter may emit lightalong a transmission path 210 to a gas which may be a measurement gas.The acoustic sensor element 112 may detect an acoustic signal emittedfrom the gas based on the received light. In other words, the acousticsignal, also referred to as photoacoustic signal, is caused by theemitted light that affects the gas. The sensing unit 8 a may detect thelight transmitted along the transmission path 6 and provides an outputsignal. The calibration unit receives the output signal from the sensingunit 8 a and provides a calibration information based on the outputsignal from the sensing unit 8 a. The calibration information may beused to in-situ calibrate the photoacoustic sensor.

The photoacoustic sensor may comprise sensing units 8 a, 8 b, 8 c, 8 din the regular light transmission path used to determine physicalcharacteristics of the IR emitter or the acoustic sensor element 112 ofthe photoacoustic sensor. The resulting output signals of the sensingunits may be used to determine a difference between an expected physicalcharacteristics determined using a calibrated photoacoustic sensor andthe current physical characteristics. Thus, based on the difference, thephotoacoustic sensor may be in-situ (e.g. during regular operation ofthe photoacoustic sensor without affecting the operation) recalibrated,e.g. by minimizing the difference due to adjusting the IR emitter and/oradapting an output signal of the photoacoustic sensor.

In other words, the apparatus 2′, 2″ comprises a calibration unit 10configured to control a signal generator 12 (not shown in FIG. 12) suchthat the signal generator feeds the IR emitter with an electric signal.Furthermore, a sensing unit 8 a is configured to detect a currentphysical characteristic of the IR emitter 6, wherein the currentphysical characteristic of the IR emitter depends on the electricsignal. The calibration unit may compare the current physicalcharacteristic of the IR emitter 6 with a target value of the physicalcharacteristic of the IR emitter to obtain a calibration signal 11′ (notshown in FIG. 12) forming a calibration information. When performing thein-situ calibration, the calibration information is applicable to thesignal generator 12 for adjusting the IR emitter and/or is applicable toan output signal of the photoacoustic sensor for correcting the outputsignal. When applying the calibration information to the output signal,the correction may be performed in the sensing unit 8 a or in a furtherevaluation unit such as an application-specific integrated circuit(ASIC) In other words, the calibration information may be applied to theacoustic sensor element 112 to output a corrected output signal eventhough the photoacoustic signal is affected e.g. by degradation.

According to embodiments, the calibration unit 10 may control the signalgenerator 12 such that the signal generator feeds the IR emitter with anelectric pulse as the electric signal. In other words, the electricsignal formed by the signal generator may be an electric pulse. To formthe electric pulse, the apparatus 2′, 2″ may comprise a further optionalsensing unit 8 d configured to detect the current physicalcharacteristic of the IR emitter 6, wherein the calibration unitcomprises a threshold switch configured to signal the signal generatorto stop feeding the IR emitter with the electric signal if the physicalcharacteristic exceeds a threshold value. The physical characteristicdescribes e.g. an inbound radiation or (an emission spectrum of) lightor a corresponding temperature that may be determined based on thedetected light spectrum.

Therefore, the further sensing unit 8 d may be located in closeproximity, e.g. located in the same chamber as the IR emitter. Adistance 204 c between the further sensing unit 8 d and the IR emitter 6may be less than 0.5 times, less than 0.25 times, or less than 0.1 timesa distance between the IR emitter 6 and the acoustic sensor element 112.The close proximity of the further sensing unit 8 d to the IR emitterenables measuring the physical characteristic of the IR emitter withhigh precision.

Furthermore, the threshold switch may comprise a hysteresis such that,when falling behind a further threshold value, the signal generatorstarts feeding the IR emitter with the electric signal. In other words,the threshold switch may be (electrically) connected to the furthersensing unit 8 d, which may be a photodiode or a temperature sensor. Ifthe (predetermined) threshold of a brightness or temperature of the IRemitter is reached, the IR emitter may be stopped heating. The regularmeasurement and/or the calibration measurement may therefore beperformed using a constant emitted power or constant emitted spectrum ofthe IR emitter. According to one embodiment, the photoacoustic sensormay be operated in a pulse mode. In the pulse mode, the IR emitter iscontrolled such that the emitted intensity increases until a maximumvalue is reached and thereafter decreases until a minimum value isreached. Even when the photoacoustic sensor is operated in a pulse mode,the threshold switch allows to perform the calibration measurement atthe same characteristic of the emitted light, e.g. same power or samefrequency spectrum of the emitted light. To ensure that the samecharacteristic is used for the calibration, the calibration is triggeredwhen the threshold switch reaches the threshold. The threshold switchmay be a Schmitt-Trigger. However, additionally or instead of thefurther (lower) threshold value, a time-based restart of the heating ofthe IR emitter may be performed. Thus, the calibration unit may beconfigured to restart the heating of the IR emitter by applying theelectric signal to the IR emitter.

The electric pulse may vary in terms of e.g. frequency spectrum of thelight or IR radiation emitted by the IR emitter that may be caused dueto providing a different input power to the IR emitter resulting in adifferent emitted spectrum for calibration and deterioration detection.E.g., if an input power of between 0.8 W and 1.2 W causes an emittedspectrum of a highest intensity between 5 μm and 7 μm, wherein a lowerinput power of between 0.3 W and 0.7 W may cause an emitted spectrum ofa highest intensity between 2 μm and 4 μm.

Furthermore, using different signal pulses having differentcharacteristics may enable differentiating between effects caused bychanges of the characteristics within the measurement gas that may varydue to varying pressures, compositions or temperatures of themeasurement gas, and influences which are not caused by the measurementgas such as effects due to the reference gas outside the measuringchamber or any polluted or degraded component. The differentcharacteristics may for example include different repetition frequenciesof the emitted light pulses (e.g. 10 Hz and 100 Hz repetitionfrequency), different emitted spectra of the emitted light pulses ordifferent shapes of the emitted light pulses. Without any influence onthe emitted IR spectrum of the IR emitter outside the measuring chamber,the photoacoustic signal generated by the emitted IR spectrum shows aknown dependency on frequency and/or amplitude changes of the emitted IRsignal. Thus, if the dependency between two different pulses differsfrom an expected dependency, e.g. if the dependency is non-linear ratherthan expected linear, it may be an indication that the photoacousticsensor suffers e.g. from degradation and should be recalibrated. Usingthis technique, it is possible to even perform the in-situ calibrationduring regular measurements. Moreover, the frequency response of theacoustic sensor element 112 may be determined using different pulses ofvarying frequencies of the emitted IR spectrum. These pulses may be usedfor measuring as measuring pulses and/or for calibration as calibrationpulses. Measurement signals or pulses may be referred to as primarysignals wherein calibration signals or pulses may be referred to assecondary signals. Thus, according to embodiments, secondary signals mayhave the same characteristics and may be the same signals as the primarysignals. In other embodiments, secondary signals may have differentcharacteristics as primary signals.

According to embodiments, the at least one of the sensing units 8 a, 8b, 8 c, 8 d may be dedicated to specific properties. For example, thesensing units 8 a, 8 b, 8 c, 8 d may be sensitive to a specificfrequency or frequency range of the emitted IR or light spectrum. If anyof the sensing units, when referring FIG. 12 any of the sensing units 8a and 8 b, is located between the measuring chamber 106 and the acousticsensor element 112, the sensing unit may for example detect a humidityin the measurement gas. Humidity may absorb a frequency component at awavelength of 2.2 μm. Thus, a sensing unit sensitive to only wavelengthsaround 2.2 μm, e.g. between 2 μm and 2.5 μm, enables detecting an amountof humidity between the IR emitter and the sensing unit and/or in themeasurement gas in the measuring chamber. This principle may be appliede.g. to gas mixtures where each gas component causes a specificfrequency component in the photoacoustic signal.

According to embodiments, the sensing unit 8 a is located at a firstdistance 204 a to an acoustic sensor element 112 of the photoacousticsensor and at a second distance 204 b to the IR or light emitter 6 ofthe photoacoustic sensor, wherein the first distance is smaller than thesecond distance. In other words, the sensing unit 8 a is located at aspatial position close to gas receiving the emitted light and convertingto the emitted light to an acoustic signal The IR light reaching thesensing unit and the IR light reaching the gas are then both attenuatedby substantially the same amount when compared to the physicalcharacteristic at the IR emitter. An acoustic sensor element 112 formeasuring the acoustic signal is arranged within the gas. In furtherother words, the sensing unit 8 a may be located at a spatial positionwith respect to the acoustic sensor element 112 of the photoacousticsensor such that the acoustic sensor element 112 and the sensing unit 8share substantially the same effective transmission path of the emittedIR light.

In some embodiments, the acoustic sensor element 112 may be located in areference chamber 110. In such embodiments, the acoustic sensor element112 and the chamber in which the sensing unit 8 is located may sharesubstantially the same effective transmission path of the emitted IRlight. By having the same effective transmission path of the emitted IRlight, the sensing unit 8 is capable of measuring influences throughoutthe complete light transmission path used for the regular operation ofthe photoacoustic sensor. In embodiments, the length of both effectivetransmission paths may differ by not more than 5%, in other embodimentsby not more than 10% and in still other embodiments by not more than20%. The transmission path may be referred to as the shortest straightconnection between the light emitter and the acoustic sensor element.Thus, refractions or optical shields affecting the transmitted light maybe omitted.

In order to obtain the same effective transmission path, the sensingunit 8 a is arranged in close proximity to the acoustic sensor element112. This location of the sensing unit 8 a in close proximity to theacoustic sensor element (microphone) 112 enables detecting multiplepossible errors, changes, or alterations of the photoacoustic sensorwhich may occur in the transmission path, e.g. displacement ofcomponents within the transmission path, degradations of chamber windowsor other optical elements due to dust or other particles etc.Distinguished from other concepts which monitor only the emitter or testonly the acoustic sensor element 112, the described embodiments enabledetecting degradation of all relevant components and takes them intoaccount for calibration. The concept achieves this in a simple mannerwhich requires only one sensing unit 8 a at the end of the operativeregular transmission path. However, optionally more than one sensingunit may be used.

According to some embodiments, the inner surfaces of the referencechamber 110 in which the acoustic sensor element 112 is placed may becoated with a reflecting material such as e.g. a gold coating. Thereflecting coating enables reflections of the emitted light within thereference chamber 110 thus increasing the effective optical path of thesignal emitted by the IR emitter. When using for example a purereference gas in the reference chamber 110, this reference gas may serveas a natural filter where an increased effective optical path increasesthe effectivity of the filtering capabilities of the reference gas.Typically, photoacoustic sensors measure the purity of a measurement gasor a measurement gas composition. Thus a pure, i.e. an uncontaminatedportion of the measurement gas or the measurement gas composition may beenclosed in the reference chamber surrounding the acoustic sensorelement 112. Optical filters may be omitted.

Generally, the goal of calibrating the photoacoustic sensor is tocontrol the stability or reliability of the photoacoustic sensor withall components. Hence, it is possible to detect changes within thecomplete transmission path or measurement path between the IR emitterand the acoustic sensor element 112 of the photoacoustic sensor. Changesor errors may be a degradation of the IR emitter, the surface of the IRemitter or (transparent) windows or transparent sealing 108 a, 108 b inthe transmission path of the photoacoustic sensor element ormisalignments of components. Furthermore, the windows may be pollutede.g. by dust, particles or due to condensation. Additionally, thephotoacoustic sensor may be mechanically corrupted if e.g. a relativeposition of the IR emitter to the acoustic sensor element 112 is changedwhich may be caused by shocks during installation.

According to further embodiments, the apparatus 2′, 2″ comprises afurther sensing unit 8 d configured to detect the current physicalcharacteristic of the IR emitter 6 at a position different from theposition of the sensing unit. The further sensing unit 8 d is located ina spatial position that is closer to the IR emitter when compared to aspatial position of the sensing unit 8 a. In other words, the furthersensing unit is located at a third distance 204 c to the IR emitter,wherein the third distance is smaller than the second distance 204 b.Furthermore, the embodiment is not limited to one further sensing unit.In some embodiments more than one further sensing units, such as sensingunits 8 c and 8 d, may be placed at different positions in thephotoacoustic sensor or nearby the photoacoustic sensor. The furthersensing units 8 c, 8 d may be used to narrow a location or to locate theactual position of an error within the photoacoustic sensor. Thus, thesensing units may be located, in the view from the IR emitter, behind arespective component which may suffer from degradation or other changesduring the lifecycle of the photoacoustic sensor. Thus, the furthersensing units determine the physical characteristics of the IR lightwhich is only partially attenuated (compared to the attenuation at theend of the transmission path) since the further sensing units arelocated between the sensing unit 8 a and the IR emitter. Depending onthe attenuation at the further sensing units, the deteriorated componentof the photoacoustic sensor may be identified and compensated for. Theamount of attenuation may be measured to directly estimate an amount ofrecalibration. The amount of recalibration may refer to a greater powerof the electric signal or the electric pulse applied to the IR emitterand/or a degree of adaption of the output signal of the photoacousticsensor. The adaption of the output signal enables to adjust the outputsignal such that the undesired attenuation is compensated.

According to embodiments, the calibration unit 10 is configured todetermine which signal or signals should be adapted for calibration,based on a difference of the physical characteristic measured by thesensing unit 8 a and the physical characteristic measured by the furthersensing unit 8 b, 8 c, 8 d. To be more specific, it can be determinedwhether to apply the calibration information for adjusting the IRemitter or to apply the calibration information to an output signal ofthe photoacoustic sensor for correcting the output signal. In otherwords, if the further sensing units identify the IR emitter as beingsuffering from degradation, the power of the electric signal may bereadjusted to achieve a constant (maximum) brightness or temperature.However, if e.g. the windows are polluted, the output signal may beadjusted to avoid an adaption of the IR emitter resulting in highertemperatures and increased degradation or to avoid a change of theemitted (light) spectrum of the IR emitter.

In the described embodiments, the apparatus 2′, 2″, when performing thein-situ calibration, may use only signals from the same transmissionpath that are used to perform a regular measurement on a measurementgas. In other words, external signals are absent, such as e.g. signalsfrom an acoustic generator for testing the acoustic sensor element.Therefore, the calibration information may be derived only from thephysical characteristic of the IR emitter.

FIG. 12 reveals a measurement module 206 and a detector module 208.Exemplary, both modules are sealed with a transparent sealing 108 a, 108b, respectively. However, this sealing is optional since thephotoacoustic sensor may be used with open modules/chambers or with onlyone module being sealed and the other module remaining open. Hence, theembodiments described above with respect to FIG. 12 may be also appliedto photoacoustic sensors with an open reference and/or measurementchamber, i.e. a reference/measurement chamber that is not sealed withthe transparent sealing. An optical shield 202 may be applied in theoptical path between the IR emitter and the acoustic sensorelement/detector 112. Thus, the optical shield 202 shadows the detector112.

Moreover, above have been described the sensing units 8 a and 8 d. FIG.12 further reveals optional sensing units 8 b and 8 c which may bephotodetectors or temperature sensors. The above described with respectto sensing unit 8 a may also be applied to the sensing unit 8 b.However, the sensing unit 8 b may be outside the direct optical path ofthe IR signal wherein the sensing unit 8 a may have a direct opticalconnection to the IR emitter. The optional further sensing unit 8 c maybe located outside the measurement chamber and the reference/detectorchamber.

Thus, the further sensing unit 8 c may detect the emitted light througha transmission path having a direction 212 different from a direction210 of the transmission path. Thus, when referring to FIG. 12, theoptical sensing unit may detect the emitted light that passes only thefirst transparent sealing 108 a. In other words, the emitted lightdetected by the further sensing unit 8 c omits passing the secondtransparent sealing 108 b. This detected emitted light may suffer fromattenuation due to a degradation of the light emitter or due to adegradation of the transparent sealing 108 a. Hence, by determining adifference between the detected emitted light of the sensing unit 8 aand the detected emitted light of the further sensing unit 8 c, a degreeof degradation of the second transparent sealing 108 a may be obtainedor at least estimated.

Further Embodiments Relate to the Following Examples

1. Apparatus 2 for in-situ calibration of a photoacoustic sensor 4, theapparatus comprising: a measurement device 8 configured to measure acurrent electric signal 18 at the IR emitter 6 of the photoacousticsensor 4; a calibration unit 10 configured to compare the currentelectric signal 18 at the IR emitter with a comparison value for theelectric signal to achieve a comparison result forming a calibrationinformation; wherein, when performing the in-situ calibration, thecalibration information is applicable to the photoacoustic sensor foradjusting the IR emitter and/or is applicable to an output signal of thephotoacoustic sensor for correcting the output signal.

2. Apparatus 2 according to example 1, wherein the calibration unit 10is configured to adjust the current electric signal based on thecomparison result to obtain a target value of the electric signal at theIR emitter to perform the in-situ calibration.

3. Apparatus 2 according to example 1 or 2, further comprising: aprocessing unit 15 configured to process the output signal of thephotoacoustic sensor based on the calibration information to obtain anadjusted output signal of the photoacoustic sensor.

4. Apparatus 2 according to any of examples 1 to 3, wherein thecalibration unit is configured to adjust the target value of theelectric signal such that a target value of a physical characteristic ofthe IR emitter 6 is obtained.

5. Apparatus 2 according to any of examples 1 to 4, wherein thecalibration unit 10 is configured to adjust the current electric signal18 such that a change of resistance of the IR emitter is compensated.

6. Apparatus 2 according to any of examples 1 to 5, wherein the currentelectric signal 18 comprises an electric pulse and wherein thecalibration unit 10 is configured to calculate a time constant of thephotoacoustic sensor 4 from a current physical characteristic based onthe electric pulse, wherein the time constant indicates an ability ofthe current physical characteristic to follow the electric pulse.

7. Apparatus according to any of examples 1 to 6, wherein the currentelectric signal 18 comprises an electric pulse and wherein thecalibration unit 10 is configured to adjust the electric pulse such thatat least one of an edge steepness, an amplitude, or a repetitionfrequency of the electric pulse is changed; wherein the change of theelectric pulse changes the physical characteristic of the IR emittersuch that the absolute difference between a current physicalcharacteristic and the target value of the physical characteristic isreduced.

8. Apparatus 2 according to any of examples 1 to 7, wherein the currentelectric signal comprises an electric pulse and wherein a currentphysical characteristic is different from the target value of thephysical characteristic due to a degradation of the IR emitter 6 andwherein the calibration unit 10 is configured to adjust a currentelectric signal or the electric pulse such that the degradation of theIR emitter is compensated.

9. Apparatus (2′) for in-situ calibration of a photoacoustic sensor (4),the apparatus (2) comprising: a calibration unit (10) configured tocontrol a signal generator (12) such that the signal generator feeds theIR emitter with an electric pulse; a sensing unit (8′) configured todetect a current physical characteristic of a surface of the IR emitter(6), wherein the current physical characteristic of the IR emitterdepends on the electric pulse; wherein the calibration unit isconfigured to compare the current physical characteristic of the surfaceof the IR emitter (6) with a target value of the physical characteristicof the surface of the IR emitter to obtain a calibration signal (11′)forming a calibration information, wherein, when performing the in-situcalibration, the calibration information is applicable to the signalgenerator (12) for adjusting the IR emitter and/or is applicable to anoutput signal of the photoacoustic sensor for correcting the outputsignal.

10. Apparatus (2′) according to example 9, wherein the calibration unit(10) is configured to adjust the electric pulse of the signal generator(12) based on the calibration information to perform the in-situcalibration.

11. Apparatus (2′) according to example 9 or 10, further comprising: aprocessing unit (15) configured to process an output signal of thephotoacoustic sensor based on the calibration information to obtain anadjusted output signal of the photoacoustic sensor.

12. Apparatus (2′) according to any of examples 9 to 11, wherein thesensing unit is configured to measure a temperature of the surface ofthe IR emitter (6) using determining a temperature of an environment ofthe IR emitter; or wherein the sensing unit (8′) is configured tomeasure an infrared radiation of the IR emitter (6) at the surface ofthe IR emitter.

13. Apparatus (2′) according to any of examples 9 to 12, wherein theapparatus (2′) comprises the signal generator (12), wherein the signalgenerator is configured to generate the electric pulse and to feed theIR emitter (6) of the photoacoustic sensor (4) with the electric pulse.

14. Apparatus (2′) according to any of examples 9 to 13, wherein thecalibration unit is configured to calculate a time constant of thephotoacoustic sensor (4) from the current physical characteristic basedon the electric pulse, wherein the time constant indicates an ability ofa current physical characteristic to follow the electric pulse.

15. Apparatus (2′) according to any of examples 9 to 14, wherein thecalibration unit is configured to adjust the electric pulse such that atleast one of an edge steepness, an amplitude, or a repetition frequencyof the electric pulse is changed; wherein the change of the electricpulse changes the physical characteristic of the IR emitter (6) suchthat the absolute difference between the current physical characteristicand the target value of the physical characteristic is reduced.

16. Apparatus (2′) according to any of examples 9 to 15, wherein thecurrent physical characteristic is different from the target value ofthe physical characteristic due to a degradation of the IR emitter andwherein the calibration unit is configured to adjust the electric pulsesuch that the degradation of the IR emitter (6) is compensated.

17. Microelectromechanical system (100) comprising: an apparatus (2′)according to any of examples 9 to 16, wherein the apparatus and the IRemitter of the photoacoustic sensor are formed in a common semiconductorsubstrate; wherein the sensing unit (8′) comprises a semiconductorsensing unit formed within the semiconductor substrate.

18. Apparatus or microelectromechanical system according to any ofexamples 1 to 17, wherein the physical characteristic comprises atemperature or an emissivity or a radiation of an electromagnetic signalof the IR emitter.

19. Use of an apparatus according to any of examples 1 to 16 or themicroelectromechanical system according to example 17 to perform amethod described herein.

It is to be understood that in this specification, the signals on linesare sometimes named by the reference numerals for the lines or aresometimes indicated by the reference numerals themselves, which havebeen attributed to the lines. Therefore, the notation is such that aline having a certain signal is indicating the signal itself. A line canbe a physical line in a hardwired implementation. In a computerizedimplementation, however, a physical line does not exist, but the signalrepresented by the line is transmitted from one calculation module tothe other calculation module. Moreover, the lines may be understood tobe unidirectional or bidirectional depending on the context of theembodiment. Hence, the (corresponding) signals may be understood to beunidirectional or bidirectional as well.

Although the present invention has been described in the context ofblock diagrams where the blocks represent actual or logical hardwarecomponents, the present invention can also be implemented by acomputer-implemented method. In the latter case, the blocks representcorresponding method steps where these steps stand for thefunctionalities performed by corresponding logical or physical hardwareblocks.

Although some aspects have been described in the context of anapparatus, it is clear that these aspects also represent a descriptionof the corresponding method, where a block or device corresponds to amethod step or a feature of a method step. Analogously, aspectsdescribed in the context of a method step also represent a descriptionof a corresponding block or item or feature of a correspondingapparatus. Some or all of the method steps may be executed by (or using)a hardware apparatus, like for example, a microprocessor, a programmablecomputer or an electronic circuit. In some embodiments, some one or moreof the most important method steps may be executed by such an apparatus.

The inventive transmitted or encoded signal can be stored on a digitalstorage medium or can be transmitted on a transmission medium such as awireless transmission medium or a wired transmission medium such as theInternet.

Depending on certain implementation requirements, embodiments of theinvention can be implemented in hardware or in software. Theimplementation can be performed using a digital storage medium, forexample a floppy disc, a DVD, a Blu-Ray, a CD, a ROM, a PROM, and EPROM,an EEPROM or a FLASH memory, having electronically readable controlsignals stored thereon, which cooperate (or are capable of cooperating)with a programmable computer system such that the respective method isperformed. Therefore, the digital storage medium may be computerreadable.

Some embodiments according to the invention comprise a data carrierhaving electronically readable control signals, which are capable ofcooperating with a programmable computer system, such that one of themethods described herein is performed.

Generally, embodiments of the present invention can be implemented as acomputer program product with a program code, the program code beingoperative for performing one of the methods when the computer programproduct runs on a computer. The program code may, for example, be storedon a machine readable carrier.

Other embodiments comprise the computer program for performing one ofthe methods described herein, stored on a machine readable carrier.

In other words, an embodiment of the inventive method is, therefore, acomputer program having a program code for performing one of the methodsdescribed herein, when the computer program runs on a computer.

A further embodiment of the inventive method is, therefore, a datacarrier (or a non-transitory storage medium such as a digital storagemedium, or a computer-readable medium) comprising, recorded thereon, thecomputer program for performing one of the methods described herein. Thedata carrier, the digital storage medium or the recorded medium aretypically tangible and/or non-transitory.

A further embodiment of the invention method is, therefore, a datastream or a sequence of signals representing the computer program forperforming one of the methods described herein. The data stream or thesequence of signals may, for example, be configured to be transferredvia a data communication connection, for example, via the internet.

A further embodiment comprises a processing means, for example, acomputer or a programmable logic device, configured to, or adapted to,perform one of the methods described herein.

A further embodiment comprises a computer having installed thereon thecomputer program for performing one of the methods described herein.

A further embodiment according to the invention comprises an apparatusor a system configured to transfer (for example, electronically oroptically) a computer program for performing one of the methodsdescribed herein to a receiver. The receiver may, for example, be acomputer, a mobile device, a memory device or the like. The apparatus orsystem may, for example, comprise a file server for transferring thecomputer program to the receiver.

In some embodiments, a programmable logic device (for example, a fieldprogrammable gate array) may be used to perform some or all of thefunctionalities of the methods described herein. In some embodiments, afield programmable gate array may cooperate with a microprocessor inorder to perform one of the methods described herein. Generally, themethods are preferably performed by any hardware apparatus.

The above described embodiments are merely illustrative for theprinciples of the present invention. It is understood that modificationsand variations of the arrangements and the details described herein willbe apparent to others skilled in the art. It is the intent, therefore,to be limited only by the scope of the impending patent claims and notby the specific details presented by way of description and explanationof the embodiments herein.

What is claimed is:
 1. A microelectromechanical system, comprising: alight emitter configured to emit light along a transmission path to agas; an acoustic sensor element configured to detect an acoustic signalemitted from the gas based on received light and generate an outputsignal based on the detected acoustic signal; a radiation sensorconfigured to detect the light transmitted along the transmission pathand to provide an information signal based on the detected light; and acalibration unit, comprising at least one processor, configured toreceive the information signal from the radiation sensor and to providecalibration information based on the information signal, wherein thelight emitter, the acoustic sensor element, the radiation sensor, andthe calibration unit are formed in a common semiconductor substrate, andwherein the radiation sensor comprises a semiconductor sensor formedwithin the semiconductor substrate.
 2. An apparatus for in-situcalibration of a photoacoustic sensor, the apparatus comprising: acalibration unit comprising at least one processor, configured tocalculate calibration information, wherein a light emitter of thephotoacoustic sensor is configured to emit an electromagnetic spectrum,wherein the photoacoustic sensor is configured to provide at least twomeasurement signals based on at least two electromagnetic spectra,wherein the calibration unit is configured to compare the at least twomeasurement signals to obtain the calibration information, and whereinthe calibration unit is configured to apply the calibration informationto the photoacoustic sensor to perform the in-situ calibration.
 3. Theapparatus according to claim 2, wherein the calibration unit isconfigured to apply the calibration information to an output signal ofthe photoacoustic sensor to perform the in-situ calibration.
 4. Theapparatus according to claim 2, wherein the calibration unit isconfigured to control an electric signal at the light emitter, whereinthe light emitter is configured to emit an electromagnetic spectrumbased on the electric signal, and wherein the calibration unit isfurther configured to adjust the electric signal at the light emitterbased on the calibration information to perform the in-situ calibration.5. The apparatus according to claim 2, further comprising: a processingunit, comprising as least one further processor, configured to calibratea determination of a gas concentration in the photoacoustic sensor usingthe calibration information to perform the in-situ calibration, whereinthe determination of the gas concentration is based on a furthermeasurement signal of the photoacoustic sensor.
 6. The apparatusaccording to claim 2, further comprising: a processing unit, comprisingas least one further processor, configured to process an output signalof the photoacoustic sensor based on the calibration information toobtain an adjusted output signal of the photoacoustic sensor.
 7. Theapparatus according to claim 2, wherein: the calibration unit isconfigured to calculate a current ratio of a first one of the at leasttwo measurement signals and a second one of the at least two measurementsignals, the calibration unit is further configured to compare thecurrent ratio to a target ratio, and the calibration unit is configuredto adjust an electric power of the light emitter such that an absolutedifference of the current ratio to the target ratio is reduced.
 8. Amethod for in-situ calibration of a photoacoustic sensor, the methodcomprising: calculating a calibration information, wherein an IR emitterof the photoacoustic sensor is configured to emit an electromagneticspectrum based on an electric signal, wherein the photoacoustic sensoris configured to provide at least two measurement signals based on atleast two electromagnetic spectra; and comparing the at least twomeasurement signals to obtain calibration information; and applying thecalibration information to the photoacoustic sensor to perform thein-situ calibration.
 9. The method of claim 8, wherein applying thecalibration information to the photoacoustic sensor includes applyingthe calibration information to an output signal of the photoacousticsensor to perform the in-situ calibration.
 10. The method of claim 8,further comprising: controlling an electric signal at the IR emitter;emitting an electromagnetic spectrum from the IR emitter based on theelectric signal; and adjusting the electric signal at the IR emitterbased on the calibration information to perform the in-situ calibration.11. The method of claim 8, further comprising: calibrating adetermination of a gas concentration in the photoacoustic sensor usingthe calibration information to perform the in-situ calibration, whereinthe determination of the gas concentration is based on a furthermeasurement signal of the photoacoustic sensor.
 12. The method of claim8, further comprising: processing an output signal of the photoacousticsensor based on the calibration information to obtain an adjusted outputsignal of the photoacoustic sensor.
 13. The method of claim 8, furthercomprising: calculating a current ratio of a first one of the at leasttwo measurement signals and a second one of the at least two measurementsignals; comparing the current ratio to a target ratio; and adjusting anelectric power of the IR emitter such that an absolute difference of thecurrent ratio to the target ratio is reduced.